Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

195A Ta

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

380W Tc

Turn Off Delay Time  

90 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2009

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

380W

Case Connection  

DRAIN

Turn On Delay Time  

23 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.75m Ω @ 195A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

9200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

240nC @ 10V

Rise Time  

220ns

Vgs (Max)  

±20V

Fall Time (Typ)  

130 ns

Continuous Drain Current (ID)  

240A

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

40V

Height  

4.826mm

Length  

10.668mm

Width  

9.652mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free